1. Qualification：
PhD(semiconductor material and device), University of Sheffield, 2018.
Msc(photonics), Royal Institute of Technology, 2013.
2. Research interests:
- Method development for analytical transmission electron microscopy and photoluminescence spectroscopy, including valence electron energy loss spectroscopy (VEELS), energy dispersive X ray spectroscopy (EDXS) and in-situ photoluminescence spectroscopy.
- Characterization of surface and interface carrier transportation based on electron beam induced current (EBIC).
- Characterization of III-nitrides compound semiconductor nanostructure, such as InGaN or AlGaN multiple quantum wells and nanowire.
- High energy electron beam damage on III-nitride semiconductors.